2SA608N transistor (pnp) features power dissipation p cm : 0.5 w (tamb=25 ) collector current i cm : -0.15 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -6 v collector cut-off current i cbo v cb = -40 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 a h fe(1) v ce = -6 v, i c = -1 ma 160 560 dc current gain h fe(2) v ce = -6 v, i c = -0.1 ma 70 collector-emitter saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma -0.3 v base-emitter saturation voltage v be(sat) i c = -100 ma, i b = -10 ma -1 v transition frequency f t v ce = -6 v, i c =-10ma 200 mhz collector output capacitance c ob v cb = -6 v, i e =0, f= 1 mhz 3 pf classification of h fe(1) rank f g range 160-320 280-560 marking 1 2 3 to-92 1. emitter 2. collector 3. base 2SA608N http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
